PPT Slide
Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Temperature Monitoring Device
Same dimensions as trench device: 6390 ?m x 9700 ?m
4 die of different poly-Si circuit lengths
X 1 (1.54 cm) X 2 (3.08 cm) X 5 (7.70 cm) X10 (15.40 cm)
- Surface of die should experience very similar
temperatures as device die trench under identical
- Expecting change of magnitude
in Rpoly from 25° C to 120° C.
- Poly-Si dopant level (n-type) is 1019 cm-3
*Fabrication by Francisco Machuca - Stanford