IFC HDP Via Etch Process Development (Jun. 1998 +)
0.35 ?m (nominal printed CD) via etched with a 1-iodoheptafluoropropane process (Process #1). An example of the effects of H-addition to plasma: Here the etch rate and the overall profile roughly match the reference process and more bulk resist remains, but overall resist selectivity is still low (~2.25:1). Emissions reductions are only on the order of 40-45% vs. C3F8 reference because of high CHF3 production. (Edge of wafer)