Near Term Goals
Continue to improve 1-iodoheptafluoropropane TEOS via etch process with respect to mask layer selectivity
Characterize process for SiN, TiN, Si, and metal stop layer selectivity and process drift / chamber impact (mini-marathon)
Perform electrical tests on metal layers deposited after 1I-iodoheptafluoropropane etch process
Fully characterize emissions and perform fluorine and iodine mass balance
Extend capability to other oxide etch applications (e.g., self-aligned contact)
Extend capability to feature sizes smaller than 0.35 µm (planned collaboration with Lincoln Laboratories using HDP etch tool presently being installed at MIT)