Development of Gas Phase Chemistries to Clean Semiconductor Wafer Surfaces

11/18/98


Click here to start


Table of Contents

Development of Gas Phase Chemistries to Clean Semiconductor Wafer Surfaces

Cleaning Steps Needed for IC Fabrication

HF/vapor Cleaning Drivers

Water and Energy Use Goals (NTRS, 1997)

Aqueous Phase HF Etching of SiO2

HF/vapor Etching of SiO2: Observations

Time Evolution of Oxide Etching in HF/Vapor

30°C SiO2 Etching Rate Response Surface

SiO2 Etching Rate is Linear in pHF

SiO2 Etching Rate is Parabolic in pHOH

Model SiO2 Etching Mechanism in HF/vapor

SiO2 Model Etching Rate Expression

FTIR Active Surface Chemical Bonds

Vibrational Fingerprints for Adsorbed Species

Surface Kinetics Experiments

Integrated Processing Apparatus

Lab Scale HF/Vapor SiO2 Etching Module

Commercial HF/vapor SiO2 Etching Tool

Acknowledgements

Author: Anthony J. Muscat

Email: muscat@erc.arizona.edu