CH4/H2 Plasma: Sputter / Etch Conditions
Absorbance
3200
3000
2800
2600
2400
2200
2000
1800
Wavenumber, cm
-1
Addition of H2 to plasma initiates etching
Large Si-H IR signal reflects higher silicon surface area (roughening)
Presence of C-H IR signal suggests formation of thin hydrocarbon layer
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