Permissible Metal Concentration Levels

Metal contamination on Si wafer due to chemical treatments may affect the gate oxide growth kinetics and device performance.

Year of First

Product Shipment

Technology Generation (nm)

1997

1999

2001

2003

2006

2009

2012

250

180

150

130

100

70

50

The National Technology Roadmap for Semiconductor: Technology Needs, 1997 Ed.

Cu on wafer (atoms/cm2)

5x109

4x109

3x109

2x109

1x109

< 109

< 109

Al on wafer (atoms/cm2)

5x1010

2.5x1010

2x1010

1.5x1010

1x1010

5x109

< 5x109

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