PPT Slide
Previous Accomplishments in Research of Oxidation
- T. Yasaka and coworkers observed a dependence of aqueous oxidation rate on dopant type and on dopant concentration.
(T. Yasaka, et. al, IEICE Trans. Electron, Vol. E75-C, No.7, July 1992.)
- C. Wade observed the relationship between [O2] and density of pits formed on H-Si(111) in aqueous fluoride solutions using STM.
- H. Luo observed the dependence of etching time of H-Si(111) on [O2] in aqueous fluoride solution using ATR-IR. No dependence observed for Hx-Si(100).
- M. Linford observed the relationship between gas phase oxidation of H-Si(111) and exposure to a critical wavelength of UV light using ATR-IR.
- B. Stefanov, Y.Chabal and coworkers observed intermediate structures in the H2O induced oxidation of Si(100)(2X1).
(B.B. Stefanov, et. al, Physics Review Letters, Vol. 81, No.18, 3908-3911, 1998)