Electrical and Material Properties of ALCVD ZrO2 Gate Dielectrics

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Table of Contents

Electrical and Material Properties of ALCVD ZrO2 Gate Dielectrics

Presentation Contents

Desirable Advanced Gate Dielectric Properties for Sub-0.1 mm MOSFET

ALCVD Reaction Cycle

Characteristics Features of ALCVD

PPT Slide

Electrical Measurements

Gate Structure / Measurement Setup

Leakage vs. EOT Comparison Between SiO2 and ZrO2 Dielectrics

J-V and C-V Characteristics of 13.8 Å EOT ZrO2 Dielectric

Film Uniformity

Frequency Dispersion

Hysteresis as a Function of Bias Sweep

PPT Slide

Material Characterizations

Synchrotron Angle Resolved XPS of Thin ALCVD ZrO2

Synchrotron XPS Differential Sputter Profile

AFM of As-Deposited ALCVD ZrO2

XTEM Analysis

XTEM Analysis

Annealing Studies

PPT Slide

Hydrogen Annealing

Summary/Tech Transfer of ALD ZrO2

Future Work

Future Work

Acknowledgements

Author: Charles Perkins