Desirable Advanced Gate Dielectric Properties for Sub-0.1 mm MOSFET

Physical Properties

• K ~ 15 - 60

• Thermally stable next to Si

(no barrier layer; annealing)

• High-quality interface with Si

Electrical Properties

• EOT < 15 Å

• J < 10-3 A/cm2 @ VDD

• Dit < 5 x 1010 cm-2 eV-1

• VFB, hysteresis < 50 mV

(for +VDD to -VDD sweep)

• No C-V dispersion

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