PPT Slide
N2 and O2 Annealing Results
- Gate stack is stable at up to 550 oC for 5 min N2 RTA
- Capacitance decreases at T > 550 oC
- Jack Lee @ UT Austin has seen chemical shifts in Si XPS peaks in interfacial layer at T > 550 oC
- Has been hypothesized that silicate/interfacial layer decomposes to SiO2 and ZrO2
- No significant changes in VFB shift with 5 min O2 RTA
- As-deposited ZrO2 shows good stoichiometry
- Decrease in leakage and capacitance for T > 500 oC signifies further interfacial oxide growth
- Hg probe used to measure all blanket annealed samples
- Good for relative comparisons only: underestimates leakage and capacitance and overestimates hysteresis due to contamination layer between Hg and ZrO2