Summary/Tech Transfer of ALD ZrO2
13.8 Å EOT demonstrated with exceptional leakage of less than 10-7 A/cm2
Dit looks noteworthy from CV curves (but still needs to be quantified)
650 oC, 60 sec hydrogen anneal is seen to significantly reduce hysteresis to an acceptable level (< 100 mV for 1 V to -3 V sweep)
ALD process is suitable for manufacturing of 8 and 12 inch wafers (exceptional uniformity and repeatability)
Insignificant frequency dispersion