Future Work
Improve pre-deposition surface preparation to minimize interfacial layer, defects and contaminants
Grow thinner ZrO2 films (20 - 40 Ĺ)
More microanalyses to determine origin of “silicide/metal” signature at Si surface
Produce wafers with practical channel doping levels to determine acceptable VT, fixed charge and hysteresis @ VDD = 1 V