40°C SiO2 Etching Rate Response Surface
- Steep increase in rate but no abrupt transition in vicinity of HF/H2O VLE.
- Linear dependence of rate on pHF at constant pH2O .
- Parabolic dependence of rate on pH2O at constant pHF .
- Maximum etching rate linear in HF and H2O partial pressures.
- pH2O (rate max) decreases with pHF .
- Rate maximum line marks a transition.