HF/vapor Etching of SiO2: Observations
Etching rate with alcohol vapor similar to that with water vapor.
High deposited to thermal oxide etching selectivity possible.
Condensed vapor film does not appear to be necessary.
Surface coverages appear to scale with fraction of saturation vapor pressures.
Influence of surface carbon.
Higher surface coverages of oxygen and fluorine than aqueous process.
Mechanism not understood.
- Role of water and other vapors.
- Residue.