PPT Slide
Issues for Organic and High C Content SiOC Films
- Narrow process window for damascene etch - Low etch rate and selectivity to SiN and photoresist
- Poor ashing resistance - Difficult sidewall polymer removal
- Significant via sidewall pullback
- Possible leakage due to silicon carbide or dangling Si bonds
- Poor thermal, mechanical properties - Low hardness results in poor damascene structural integrity, incompatibility to CMP (peeling, scratches, etc.), Cu protrusions
- High CTE and Low Young’s Modulus affected via integrity - Low thermal conductivity causes excess Joule heating, resulting in poor EM lifetime and Cu protrusions