In-Situ Clean versus Remote CleanTM
- Results in corrosion of chamber components at high power density.
- Limited etch rate, longer clean time.
- Limited PFC Utilization Removal Efficiency (URE = 20-70%)
- Near complete Utilization Removal Efficiency of NF3 (URE = 99%)
- High etch rate (20-60% reduction of clean time)
- No ion bombardment in main chamber(“soft” clean)
- Increased Mean Wafer Between Clean (3000 --> 5000 wafers)
- Global Warming emissions reduced by one to two order of magnitude (Carbon equivalent).